Published May 1994 | Version v1
Journal article Metadata-only

Electrical properties of WSix/Si(111) films by multilayer sputtering

Creators

  • 1. China Univ. of Science and Technology, Hefei, AH (China)
  • 2. Department of Physics, Teachers College of Yancheng, Yancheng, JS (China)

Description

Tungsten silicide films have been sputtered onto silicon substrate and annealed at temperature ranging from 400 to 1000 degree C in vacuum. The structure and defect of each film is detected by X-ray diffraction (XRD) and positron annihilation technology (PAT), respectively. The sheet resistance has been measured and the result indicates that the sheet resistance of films decrease steeply as a result of annealing in the range of 600-700 degree C. This phenomenon corresponds to the crystallization of W5Si3 tetragonal phase in films which has been certified by XRD. Electrical properties of films are sensitive to structure and defects in films and electrical measurement can be used as a good probe for the study on the characteristics of films

Additional details

Publishing Information

Journal Title
Acta Physica Sinica
Journal Volume
43
Journal Issue
5
Journal Page Range
p. 823-828.
ISSN
1000-3290
CODEN
WLHPAR

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
26051714
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; ANNIHILATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; LAYERS; POSITRONS; SILICON; SPUTTERING; SUBSTRATES; TEMPERATURE DEPENDENCE; THIN FILMS; TUNGSTEN SILICIDES; X-RAY DIFFRACTION
Descriptors DEC
ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; COHERENT SCATTERING; DIFFRACTION; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; FILMS; HEAT TREATMENTS; INTERACTIONS; LEPTONS; MATTER; PARTICLE INTERACTIONS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; SCATTERING; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS