Preparation and characterization of indium oxide thin films

Indium thin films of about 200 nm thickness deposited under a vacuum of 10-5 Torr by resistive heating were annealed at 673, 773 and 873 K in air and oxygen atmosphere. X-ray diffraction (XRD) studies of the films annealed at 873 K for 60 min in air indicate the complete transformation of In films to In2O3 films. Annealing at 873 K for 60 min in oxygen atmosphere enhanced the metallic oxidation resulting in a better structured In2O3 thin films. Polycrystalline In2O3 thin films formed were of cubic structure with a preferred orientation along the (222) plane. In an attempt to investigate the structural changes due to ageing, indium and indium oxide thin films kept under vacuum and exposed to air were studied. The present studies reveal a faster corrosion for indium films exposed to air, but little changes for In2O3 films. (author). 7 refs., 3 tabs