Gain Characteristics of InGaAsN Quantum Well Heterostructures with GaAs and InP Substrates

The present paper reports the effect of substrate on the optical gain characteristics of InGaAsN material based quantum well (QW) heterostructure. To analyze the substrate effect on the optical gain, two substrate, namely, GaAs and InP have been chosen. Taking in to account both of the substrates, the quantum mechanical approach (k.p method) has been adopted to calculate the confinement of the carriers related with quantum well and the optical gain. In addition, for InGaAsN/InP heterostructure, the cladding effect has also been observed. The simulated results exhibit that the substrate has played a very important role in modifying the optical gain characteristics due to the presence of strain which comes into play due to the lattice discrepancy. (paper)