The dynamics of coarsening in highly anisotropic systems: Si particles in Al–Si liquids
Creators
- 1. Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208 (United States)
- 2. Swiss Light Source, Paul Scherrer Institut, 5232 Villigen (Switzerland)
Description
The coarsening process of an Al–29.9wt%Si alloy is studied using four-dimensional phase contrast X-ray tomography. This alloy is composed of highly anisotropic, primary Si particles in an eutectic matrix. We analyze the morphology of the primary Si particles during coarsening by determining the interface normal distribution and the interface shape distribution. The inverse surface area per unit volume increases with the cube root of time despite the lack of microstructural self-similarity and highly anisotropic particle morphology. More specifically, over the time frame of the experiments, the Si particles evolve from mostly faceted domains to a more isotropic structure that is not given by the Wulff shape of the crystal. These trends can be rationalized by the presence of twin defects that intersect particle edges and that may provide the kink sites necessary for interfacial propagation, thus leading to a more isotropic structure. While in many cases the interfacial velocity of Si solid–liquid interfaces is highly anisotropic, the presence of many defects leads to a highly mobile interface and diffusion-limited coarsening
Availability note (English)
Available from http://dx.doi.org/10.1016/j.actamat.2015.06.064Additional details
Identifiers
- DOI
- 10.1016/j.actamat.2015.06.064;
- PII
- S1359-6454(15)00462-0;
Publishing Information
- Journal Title
- Acta Materialia
- Journal Volume
- 97
- Journal Page Range
- p. 325-337
- ISSN
- 1359-6454
- CODEN
- ACMAFD
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47022632
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM ALLOYS; ANISOTROPY; CRYSTALS; DEFECTS; DIFFUSION; DISTRIBUTION; EUTECTICS; FOUR-DIMENSIONAL CALCULATIONS; INTERFACES; LIQUIDS; MICROSTRUCTURE; SILICON ALLOYS; SOLIDS; SURFACE AREA; TOMOGRAPHY; X RADIATION
- Descriptors DEC
- ALLOYS; DIAGNOSTIC TECHNIQUES; ELECTROMAGNETIC RADIATION; FLUIDS; IONIZING RADIATIONS; RADIATIONS; SURFACE PROPERTIES
Optional Information
- Copyright
- Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.