Published September 15, 2015 | Version v1
Journal article

The dynamics of coarsening in highly anisotropic systems: Si particles in Al–Si liquids

  • 1. Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208 (United States)
  • 2. Swiss Light Source, Paul Scherrer Institut, 5232 Villigen (Switzerland)

Description

The coarsening process of an Al–29.9wt%Si alloy is studied using four-dimensional phase contrast X-ray tomography. This alloy is composed of highly anisotropic, primary Si particles in an eutectic matrix. We analyze the morphology of the primary Si particles during coarsening by determining the interface normal distribution and the interface shape distribution. The inverse surface area per unit volume increases with the cube root of time despite the lack of microstructural self-similarity and highly anisotropic particle morphology. More specifically, over the time frame of the experiments, the Si particles evolve from mostly faceted domains to a more isotropic structure that is not given by the Wulff shape of the crystal. These trends can be rationalized by the presence of twin defects that intersect particle edges and that may provide the kink sites necessary for interfacial propagation, thus leading to a more isotropic structure. While in many cases the interfacial velocity of Si solid–liquid interfaces is highly anisotropic, the presence of many defects leads to a highly mobile interface and diffusion-limited coarsening

Availability note (English)

Available from http://dx.doi.org/10.1016/j.actamat.2015.06.064

Additional details

Identifiers

DOI
10.1016/j.actamat.2015.06.064;
PII
S1359-6454(15)00462-0;

Publishing Information

Journal Title
Acta Materialia
Journal Volume
97
Journal Page Range
p. 325-337
ISSN
1359-6454
CODEN
ACMAFD

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47022632
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ALUMINIUM ALLOYS; ANISOTROPY; CRYSTALS; DEFECTS; DIFFUSION; DISTRIBUTION; EUTECTICS; FOUR-DIMENSIONAL CALCULATIONS; INTERFACES; LIQUIDS; MICROSTRUCTURE; SILICON ALLOYS; SOLIDS; SURFACE AREA; TOMOGRAPHY; X RADIATION
Descriptors DEC
ALLOYS; DIAGNOSTIC TECHNIQUES; ELECTROMAGNETIC RADIATION; FLUIDS; IONIZING RADIATIONS; RADIATIONS; SURFACE PROPERTIES

Optional Information

Copyright
Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.