Published January 1991
| Version v1
Report
An explanation for the rise in Tc in the Tl- and Bi-based high-temperature superconductors
Description
Using the plasmon exchange model for the high T(sub c) superconductor, it is shown that the T(sub c) rises with an increase in the number of CuO layers per unit cell, which is in agreement with recent observations in the Tl- and Bi-based compounds. The calculation also suggests that the sample will become superconducting in successive stages and that there is a saturation effect, i.e., that T(sub c) cannot be raised indefinitely by increasing the number of CuO layers
Additional details
Publishing Information
- Imprint Title
- AMSAHTS 1990: Advances in Materials Science and Applications of High Temperature Superconductors
- Imprint Pagination
- 488 p.
- Journal Page Range
- p. 331.
- Report number
- N--92-21605
Conference
- Title
- advances in material science and applications of high temperature superconductors.
- Acronym
- AMSAHT'S 90
- Dates
- 2-6 Apr 1990.
- Place
- Greenbelt, MD (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 23078245
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BISMUTH OXIDES; COPPER OXIDES; HIGH-TC SUPERCONDUCTORS; PLASMONS; SUPERCONDUCTIVITY; THALLIUM OXIDES; TRANSITION TEMPERATURE
- Descriptors DEC
- BISMUTH COMPOUNDS; CHALCOGENIDES; COPPER COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; QUASI PARTICLES; SUPERCONDUCTORS; THALLIUM COMPOUNDS; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- Imprint:Abstract Only.
- Secondary number(s)
- NASA-CP--3100; REPT--90B00018; NAS--1.55:3100; CONF-900414--.