Published May 2018 | Version v1
Journal article

Structure and Surface Morphology of Cd1–xMnxSe Epitaxial Films

  • 1. Azerbaijan National Academy of Sciences, Abdullaev Institute of Physics (Azerbaijan)
  • 2. Azerbaijan National Academy of Sciences, Institute of Radiation Problems (Azerbaijan)
  • 3. Baku State University (Azerbaijan)

Description

Cd1–xMnxSe (х = 0.03) epitaxial films are produced by the molecular beam condensation method in a vacuum chamber with a residual pressure of 10–4 Pa on mica and glass substrates. It is established that at room temperature and at a substrate temperature of T = 573 K films of polycrystalline structure grow on the mica substrates, but films of both polycrystalline and amorphous structure grow on the glass substrates. It is shown that the polycrystalline Cd1–xMnxSe (х = 0.03) films, unlike the bulk crystals, have a sphalerite-type structure with a lattice parameter of a = 6.05 Å. Increasing the substrate temperature to 673 K leads to epitaxial growth with the direction [111]. Dark aggregates, observed on the film surface, are removed using a source of compensating Se vapors during the growth process. The optimal conditions for the production of structurally perfect epitaxial films are defined.

Additional details

Identifiers

Publishing Information

Journal Title
Surface Investigation: X-ray, Synchrotron and Neutron Techniques
Journal Volume
12
Journal Issue
3
Journal Page Range
p. 504-506
ISSN
1027-4510

Optional Information

Copyright
Copyright (c) 2018 Pleiades Publishing, Ltd.