Charge imbalance effects on interlayer hopping and Fermi surfaces in multilayered high-Tc cuprates

We study doping dependence of interlayer hoppings, tsub(perpendicular), in multilayered cuprates with four or more CuO2 planes in a unit cell. When the double occupancy is forbidden in the plane, an effective amplitude of tsub(perpendicular) in the Gutzwiller approximation is shown to be proportional to the square root of the product of doping rates in adjacent two planes, i.e., tsub(perpendicular)eff ∝ tsub(perpendicular)√δ1δ2 represent the doping rates of the two planes. More than three-layered cuprates have two kinds of CuO2 planes, i.e., inner- and outer planes (IP and OP), resulting in two different values of tsub(perpendicular)eff, i.e., tsub(perpendicular)1eff ∝ tsub(perpendicular)√δIPδIP between IP's , and tsub(perpendicular)2eff∝ tsub(perpendicular)√δIPδOP between IP and OP. Fermi surfaces are calculated in the four-layered t-t'-t''-J model by the mean-field theory. The order parameters, the renormalization factor of tsub(perpendicular), and the site-potential making the charge imbalance between IP and OP are self-consistently determined for several doping rates. We show the interlayer splitting of the Fermi surfaces, which may be observed in the angle resolved photoemission spectroscopy measurement. (author)