Published November 16, 1983
| Version v1
Journal article
Change in capacitance of InP MIS diodes caused by the piezoelectric effect
Description
Both the surface state density and the fixed charge density at the interface are evaluated from the investigation of the effect of mechanical stress on the capacitance-voltage characteristics of the InP MIS diodes. A good agreement between experimental and calculated characteristics is shown
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 80
- Journal Issue
- 1
- Series
- Phys. Status Solidi A.
- Journal Page Range
- K25-K28
- ISSN
- 0031-8965
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 15030674
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CAPACITANCE; CHARGE DENSITY; ELECTRIC POTENTIAL; INDIUM PHOSPHIDES; INTERFACES; PIEZOELECTRICITY; POLARIZATION; SEMICONDUCTOR DIODES; STRAINS; STRESSES; SURFACES
- Descriptors DEC
- ELECTRICAL PROPERTIES; ELECTRICITY; INDIUM COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES
Optional Information
- Notes
- Short note.