A comparative study of digital low dropout regulators
Creators
- 1. State Key Laboratory of Analog and Mixed-Signal VLSI, Institute of Microelectronics, DECE/FST, University of Macau, Macau (China)
Description
Granular power management in a power-efficient system on a chip (SoC) requires multiple integrated voltage regulators with a small area, process scalability, and low supply voltage. Conventional on-chip analog low-dropout regulators (ALDOs) can hardly meet these requirements, while digital LDOs (DLDOs) are good alternatives. However, the conventional DLDO, with synchronous control, has inherently slow transient response limited by the power-speed trade-off. Meanwhile, it has a poor power supply rejection (PSR), because the fully turned-on power switches in DLDO are vulnerable to power supply ripples. In this comparative study on DLDOs, first, we compare the pros and cons between ALDO and DLDO in general. Then, we summarize the recent DLDO advanced techniques for fast transient response and PSR enhancement. Finally, we discuss the design trends and possible directions of DLDO. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/41/11/111405Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 41
- Journal Issue
- 11
- Journal Page Range
- [9 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54020550
- Subject category
- S42: ENGINEERING;
- Descriptors DEI
- DESIGN; ELECTRIC POTENTIAL; TRANSIENTS; VOLTAGE REGULATORS