Published November 1, 2020 | Version v1
Journal article

A comparative study of digital low dropout regulators

  • 1. State Key Laboratory of Analog and Mixed-Signal VLSI, Institute of Microelectronics, DECE/FST, University of Macau, Macau (China)

Description

Granular power management in a power-efficient system on a chip (SoC) requires multiple integrated voltage regulators with a small area, process scalability, and low supply voltage. Conventional on-chip analog low-dropout regulators (ALDOs) can hardly meet these requirements, while digital LDOs (DLDOs) are good alternatives. However, the conventional DLDO, with synchronous control, has inherently slow transient response limited by the power-speed trade-off. Meanwhile, it has a poor power supply rejection (PSR), because the fully turned-on power switches in DLDO are vulnerable to power supply ripples. In this comparative study on DLDOs, first, we compare the pros and cons between ALDO and DLDO in general. Then, we summarize the recent DLDO advanced techniques for fast transient response and PSR enhancement. Finally, we discuss the design trends and possible directions of DLDO. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/41/11/111405

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
41
Journal Issue
11
Journal Page Range
[9 p.]
ISSN
1674-4926

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
54020550
Subject category
S42: ENGINEERING;
Descriptors DEI
DESIGN; ELECTRIC POTENTIAL; TRANSIENTS; VOLTAGE REGULATORS