Published February 15, 2013 | Version v1
Journal article

Electronic structures in unoccupied states of Bi thin film studied with two-photon photoemission spectroscopy

  • 1. Synchrotron Light Application Center, Saga University, 1 Honjo, Saga 840-8502 (Japan)
  • 2. Department of Mechanical Engineering, Kobe University, Nada-ku, Kobe 657-8501 (Japan)

Description

We have performed synchrotron-radiation angle-resolved photoemission and angle-resolved two-photon photoemission (2PPE) study of Bi(1 1 1) films with the thickness of 12 bilayers grown on Si(1 1 1) – 7 × 7. From the detailed analysis of the excitation energy dependence of angle-resolved 2PPE spectra, we have determined the electronic structures in the occupied and unoccupied regions. The observed electronic structures in the unoccupied states above the Fermi-energy were attributed to the quantum-well states originate from the quantization of the 6p-derived bulk bands.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2012.07.002

Additional details

Identifiers

DOI
10.1016/j.apsusc.2012.07.002;
PII
S0169-4332(12)01176-2;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
267
Journal Page Range
p. 66-69
ISSN
0169-4332
CODEN
ASUSEE

Conference

Title
11. international conference on atomically controlled surfaces, interfaces and nanostructures
Dates
3-7 Oct 2011
Place
St. Petersburg (Russian Federation)

Optional Information

Copyright
Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.