Published 1980
| Version v1
Journal article
High concentration effects of ion implanted boron in silicon
- 1. Fraunhofer-Gesellschaft zur Foerderung der Angewandten Forschung e.V., Muenchen (Germany, F.R.). Inst. fuer Festkoerpertechnologie
Description
The diffusion behavior of implanted boron in silicon was investigated using the 10B(n,α)7Li nuclear reaction. An anomalous behavior with a strong reduction of the diffusivity above an effective solubility limit at 1.5 x 1019, 6x 1019, and 1.1 x 1020 cm-3 was found for annealing temperatures of 800, 900, and 1,000 C, respectively. (orig.) 891 CDS/orig. 892 MB
Additional details
Publishing Information
- Journal Title
- Appl. Phys.
- Journal Volume
- 22
- Journal Issue
- 1
- Series
- Appl. Phys.
- Journal Page Range
- 35-38
- ISSN
- 0340-3793
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 11532870
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ALPHA REACTIONS; ANNEALING; BORON 10 BEAMS; BORON 10 TARGET; DIFFUSION; EXPERIMENTAL DATA; GRAPHS; HIGH TEMPERATURE; ION IMPLANTATION; ISOLATED VALUES; KEV RANGE 100-1000; LITHIUM 7; NEUTRON REACTIONS; SILICON; SOLUBILITY
- Descriptors DEC
- BARYON REACTIONS; BEAMS; DATA; DATA FORMS; ELEMENTS; ENERGY RANGE; HADRON REACTIONS; HEAT TREATMENTS; INFORMATION; ION BEAMS; ISOTOPES; KEV RANGE; LIGHT NUCLEI; LITHIUM ISOTOPES; NUCLEAR REACTIONS; NUCLEI; NUCLEON REACTIONS; NUMERICAL DATA; ODD-EVEN NUCLEI; SEMIMETALS; STABLE ISOTOPES; TARGETS