Published January 29, 1990 | Version v1
Journal article

Molecular beam epitaxial growth of InAs on a TlBaCaCuO superconducting film

  • 1. Department of Electrical and Computer Engineering, Materials Department, University of California, Santa Barbara, California 93106 (USA)
  • 2. Superconductor Technologies Inc., 460 Ward Drive, Suite F, Santa Barbara, California 93111 (USA)

Description

Results of growth of InAs on a superconducting TlCaBaCuO (2-1-2-2) thin film are reported. The InAs was grown by molecular beam migration-enhanced epitaxy at a substrate temperature of 250 degree C. The Tc(zero) of the Tl film before and after InAs deposition was 106 and 100 K, respectively. X-ray diffraction and reflection electron microscopy studies showed the InAs to be polycrystalline, having grains in the 300 A size range. This is the first report of deposition of a III-V semiconductor on superconductor, without significant degradation of Tc

Additional details

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
56
Journal Issue
5
Series
Appl. Phys. Lett.
Journal Page Range
490-492
ISSN
0003-6951
CODEN
APPLA