Deep radiation-defect level in electron-irradiated n-type indium antimonide

An investigation was made of the galvanomagnetic effects observed when weak magnetic fields were applied to undoped n-type InSb samples [n = (3-5) x 1014 cm-3] irradiated with electrons (T ∼ 300 K, E = 4-8 MeV, Φ ≤ 2 x 1017 cm-2) and subjected to pressures P ≤ 15 kbar. A deep level of Et∼Ec -0.05 eV energy was found at the bottom of the conduction band of the irradiated samples. the applied pressure increased the activation energy Et of this deep level and caused n-p conversion at low temperatures because of the constancy of the energy position of the level Et relative to the top of the valence band of indium antimonide. A comparison of the results obtained with the published data led to the conclusion that electron irradiation of indium antimonide created three deep levels which were split off from the top of the valence band and located near the bottom of the conduction band