Published October 2015
| Version v1
Journal article
Radiation hardness of n-GaN schottky diodes
Creators
- 1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
- 2. Nitride Crystals Group (Russian Federation)
- 3. Nitride Crystals Inc. (United States)
- 4. St. Petersburg State Polytechnic University (Russian Federation)
Description
Schottky-barrier diodes with a diameter of ∼10 µm are fabricated on n-GaN epitaxial films grown by hydride vapor-phase epitaxy (HVPE) on sapphire substrates. The changes in the parameters of the diodes under irradiation with 15 MeV protons are studied. The carrier removal rate was found to be 130–145 cm–1. The linear nature of the dependence N = f(D) (N is the carrier concentration, and D, the irradiation dose) shows that compensation of the material is associated with transitions of electrons from shallow donors to deep acceptor levels which are related to primary radiation defects
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 49
- Journal Issue
- 10
- Journal Page Range
- p. 1341-1343
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47039505
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHARGE CARRIERS; CONCENTRATION RATIO; ELECTRONS; FILMS; GALLIUM NITRIDES; HYDRIDES; IRRADIATION; MEV RANGE; PROTONS; RADIATION DOSES; RADIATION HARDNESS; SAPPHIRE; SCHOTTKY BARRIER DIODES; SUBSTRATES; VAPOR PHASE EPITAXY
- Descriptors DEC
- BARYONS; CORUNDUM; CRYSTAL GROWTH METHODS; DIMENSIONLESS NUMBERS; DOSES; ELEMENTARY PARTICLES; ENERGY RANGE; EPITAXY; FERMIONS; GALLIUM COMPOUNDS; HADRONS; HYDROGEN COMPOUNDS; LEPTONS; MINERALS; NITRIDES; NITROGEN COMPOUNDS; NUCLEONS; OXIDE MINERALS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES
Optional Information
- Copyright
- Copyright (c) 2015 Pleiades Publishing, Ltd.