Published May 2006 | Version v1
Journal article Metadata-only

Influence of pressure on properties of the structures of metal-glass-semiconductor

Creators

  • 1. National University of Uzbekistan, Tashkent (Uzbekistan)

Description

It is revealed, that all-round hydrostatic compression of structures the metal-glass-semiconductor results in redistribution of generation of the centers located in volume of the semiconductor and renders influence on energy distribution of surface states located on the separation of (Si) - semiconductor border (PbO-SiO2-B2O3-Al2O3-Ta2O5). (author)

Additional details

Additional titles

Original title (Russian)
Влияние давления на свойства структур металл-стекло-полупроводник

Publishing Information

Journal Title
Uzbekiston Respublikasi Fanlar Akademiyasining Maruzalari
Journal Issue
no.3
Journal Page Range
p. 24-27
ISSN
1019-8954

INIS

Country of Publication
Uzbekistan
Country of Input or Organization
Uzbekistan
INIS RN
39122835
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ALUMINIUM; ALUMINIUM OXIDES; BORON OXIDES; BOROSILICATE GLASS; GLASS; HYDROSTATICS; LEAD OXIDES; MOS SOLAR CELLS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PRESSURE DEPENDENCE; PRESSURE RANGE MEGA PA 100-1000; SILICON; SILICON OXIDES; TANTALUM OXIDES
Descriptors DEC
ALUMINIUM COMPOUNDS; BORON COMPOUNDS; CHALCOGENIDES; DIRECT ENERGY CONVERTERS; ELEMENTS; EQUIPMENT; GLASS; LEAD COMPOUNDS; MATERIALS; METALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PRESSURE RANGE; PRESSURE RANGE MEGA PA; REFRACTORY METAL COMPOUNDS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SILICON COMPOUNDS; SOLAR CELLS; SOLAR EQUIPMENT; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
5 refs., 2 figs.