Electron transport in InAs nanowire quantum dots

We investigate electron transport in single and double quantum dots defined in catalytically grown InAs nanowires containing down to a single electron. We determine g-factor and strength of the spin-orbit interaction directly from excited state measurements in these few electron quantum dots. Using local gates to deplete homogeneous InAs nanowires offers a high degree of tunability for defining double quantum dots. Here we show that such systems are ideally suited to manipulate single spins and charges for electron pumping, charge read-out and spin manipulation applications