Effects of primary recoil energy on the production rate of mobile defects during elevated temperature irradiation
Creators
- 1. Argonne National Lab., IL (USA). Materials Science and Technology Div.
Description
Radiation-induced segregation rates in a Ni-12.7 at% Si alloy have been measured as a function of temperature using ions of various masses and energies. An analysis of the segregation kinetics using a simple analytical model yielded the relative efficiency of each of the ions for producing mobile defects directly from ratios of their measured segregation rates. In this paper, we also show that the relative efficiencies can also be determined from measured shifts in the peak segregation temperature. Both methods yield a strong decrease in efficiency with increasing ion mass. The reduction in efficiency for the heavier ions was found to be significantly larger than that measured at very low temperatures by resistivity techniques. The latter are often used as a basis for correlating damage structures produced at elevated temperaturs. Differences between the low and high temperature measurements indicate that relative efficiencies determined from segregation measurements are more reliable for correlating microstructural changes that are produced in different irradiation environments at high temperatures. (orig.)
Additional details
Publishing Information
- Journal Title
- J. Nucl. Mater.
- Journal Volume
- 133/134
- Series
- J. Nucl. Mater.
- Journal Page Range
- 373-377
- ISSN
- 0022-3115
- CODEN
- JNUMA
Conference
- Title
- 1. international conference on fusion reactor materials (ICFRM-1).
- Dates
- 3-6 Dec 1984.
- Place
- Tokyo (Japan).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 17015992
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- ACTIVATION ENERGY; ATOMIC DISPLACEMENTS; CHEMICAL COMPOSITION; COMPARATIVE EVALUATIONS; DIFFUSION; EXPERIMENTAL DATA; HELIUM IONS; HIGH TEMPERATURE; HYDROGEN IONS; INTERSTITIALS; KINETICS; KRYPTON IONS; LITHIUM IONS; NICKEL ALLOYS; NICKEL IONS; RADIATION EFFECTS; RECOILS; SEGREGATION; SILICON ALLOYS; TEMPERATURE DEPENDENCE; THEORETICAL DATA; TIME DEPENDENCE; VACANCIES
- Descriptors DEC
- ALLOYS; ATOMIC IONS; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DATA; ENERGY; EVALUATION; INFORMATION; IONS; NUMERICAL DATA; PHYSICAL RADIATION EFFECTS; POINT DEFECTS
Optional Information
- Notes
- Also published as CONF-841246--19.