Published October 2003 | Version v1
Journal article Metadata-only

Effect of irradiation with fast neutrons on electrical characteristics of devices based on CVD 4H-SiC epitaxial layers

Creators

  • 1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 (Russian Federation)
  • 2. Royal Institute of Technology, Department of Electronics, Electrum 229, SE 16440 Kista (Sweden)
  • 3. Acreo AB, Electrum 236, SE 16440 Kista (Sweden)
  • 4. St. Petersburg Electrotechnical University, Center of Microtechnology and Diagnostics, St. Petersburg, 107376 (Russian Federation)
  • 5. Specialized Electronic Systems, Moscow, 115409 (Russian Federation)

Description

The effect of irradiation with 1-MeV neutrons on electrical properties of Al-based Schottky barriers and p+-n-n+ diodes doped by ion-implantation with Al was studied; the devices were formed on the basis of high-resistivity, pure 4H-SiC epitaxial layers possessing n-type conductivity and grown by vapor-transport epitaxy. The use of such structures made it possible to study the radiation defects in the epitaxial layer at temperatures as high as 700 K. Rectifying properties of the diode structures were no longer observed after irradiation of the samples with neutrons with a dose of 6 x 1014 cm-2; this effect is caused by high (up to 50 GΩ) resistance of the layer damaged by neutron radiation. However, the diode characteristics of irradiated p+-n-n+ structures were partially recovered after an annealing at 650 K

Additional details

Identifiers

DOI
10.1134/1.1619523;

Publishing Information

Journal Title
Semiconductors
Journal Volume
37
Journal Issue
10
Journal Page Range
p. 1229-1233
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35094510
Subject category
S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Translation
Descriptors DEI
ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; ENERGY GAP; EPITAXY; FAST NEUTRONS; ION IMPLANTATION; IRRADIATION; LAYERS; MEV RANGE 01-10; NEUTRON BEAMS; P-N JUNCTIONS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; TEMPERATURE RANGE 0400-1000 K
Descriptors DEC
BARYONS; BEAMS; CARBIDES; CARBON COMPOUNDS; CHEMICAL COATING; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DEPOSITION; DOSES; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; ENERGY RANGE; FERMIONS; HADRONS; HEAT TREATMENTS; MATERIALS; MEV RANGE; NEUTRONS; NUCLEON BEAMS; NUCLEONS; PARTICLE BEAMS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SILICON COMPOUNDS; SURFACE COATING; TEMPERATURE RANGE

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 37, 1260-1264 (No. 10, 2003); (c) 2003 MAIK ''Nauka / Interperiodica''.