Published July 6, 1976 | Version v1
Patent Open

Source of spin polarized electrons

Creators

Description

A method is described of producing intense beams of polarized free electrons in which a semiconductor with a spin orbit split valence band and negative electron affinity is used as a photocathode and irradiated with circularly polarized light

Availability note (English)

MF available from INIS under the Report Number.

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Additional details

Additional titles

Augmented title (English)
Patent

Publishing Information

Imprint Pagination
6 p.
IPC:
Int. Cl.G21G4/11; H01J39/00.
IPC
Int. Cl.G21G4/11; H01J39/00.
Patent number
US patent document 3,968,376

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
8290508
Subject category
S43: PARTICLE ACCELERATORS;
Descriptors DEI
CATHODES; ELECTRON SOURCES; PHOTOELECTRIC EMISSION; POLARIZED BEAMS; SEMICONDUCTOR MATERIALS; SPECIFICATIONS; VISIBLE RADIATION
Descriptors DEC
BEAMS; ELECTRODES; ELECTROMAGNETIC RADIATION; ELECTRON EMISSION; EMISSION; PARTICLE SOURCES; RADIATION SOURCES; RADIATIONS