Ion implantation of Ar and H into Si

Damage formed by Ar+ and H+ implantation into Si is studied. Implantation is performed through thin oxide layer at 100 keV with different doses. Post implant annealing is performed at temperatures ranging from 500 to 900degC. In Ar+ implantation at 5.0x1015/cm2, 200 nm thick amorphous layer was formed. The amorphized layer, however, does not change to crystalline layer with an annealing at 900degC. In implantation of H+ at 1.0x1017/cm2, recrystallization occurs with annealing at 600degC at the surface. Damaged layer, however, still exists at 0.8 μm deep region. This residual damage indicates the formation of antibonding site and void formation. Void formation is an important process in the SOI manufacture. (author)