Published June 1, 2003 | Version v1
Report Metadata-only

Linear temperature dependence of conductivity in the 'insulating' regime of dilute two-dimensional holes in GaAs

Creators

  • 1. Sandia National Laboratories (United States)
  • 2. Princeton University, Princeton, NJ (United States)
  • 3. Bell Labs, Lucent Technologies, Murray Hill, NJ (United States)

Description

The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing conductivity with decreasing temperature, is not observed when the conductivity is smaller than e2/h. We suggest that strong interactions in a regime close to the Wigner crystallization must be playing a role in the unusual transport

Availability note (English)

Available from Sandia National Laboratories (US)

Additional details

Publishing Information

Imprint Pagination
3 p.
Report number
SAND--2003-2315J

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
40029210
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Non-conventional Literature
Descriptors DEI
CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; GALLIUM ARSENIDES; HOLES; STRONG INTERACTIONS; TEMPERATURE DEPENDENCE
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BASIC INTERACTIONS; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; INTERACTIONS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; PNICTIDES

Optional Information

Contract/Grant/Project number
AC04-94AL85000
Notes
Proposed for publication in Physical Review B.
Funding organization
US Department of Energy (United States)