Charge-carrier recombination on radiation defects in dislocation-free n-silicon obtained by zone melting

The characteristic features appearing in charge-carrier recombination on radiation defects in dislocation-free n-silicon, grown by zone melting, as a result of the presence of growth imperfections, which generate deformation stresses, in the volume of the crystal are investigated. The results are explained under the assumption that clusters of E centers are formed as a result of irradiation, which results in the appearance of potential barriers and increases the effective cross section for trapping of minority charge carriers by E centers