An anomalous redistribution of boron and arsenic implanted into silicon at the biginning of annealing

As ions were implanted into Si wafers together with B ions, but the ions differed from one another in the projected range. The implanted Si wafers were annealed at 950degC for 5-1000min. in flowing Ar gas. The redistribution profile of the implanted As overlapped to that of the implanted B at the beginning of annealing. The number of the As and the B in the overlap region did not vary even if prolonged annealing was performed for the samples. (author)