Published November 1994 | Version v1
Journal article Metadata-only

Computer simulation of sputtering and atomic redistribution in Hg0.8Cd0.2Te targets under Ar+ ions bombardment

Creators

  • 1. Shandong Univ., Jinan (China). Dept. of Physics
  • 2. Shandong Univ., Jinan (China). Inst. of Infrared Remote Sensing

Description

The sputtering of Hg0.8Cd0.2Te target by low energy Ar+ ions has been simulated by using Monte Carlo method. The simulation results show that the concentration of Hg in the surface region of the target after ion bombardment is lower than the one before ion bombardment, but in a deeper region an excess concentration of Hg is produced due to recoil implantation. The excess concentration of Hg there may act as a donor dopant diffusion source for over doping the acceptor levels in the adjacent region and turn the p-type Hg0.8Cd0.2Te into an n-type material

Additional details

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
11
Journal Issue
11
Journal Page Range
p. 717-720.
ISSN
0256-307X
CODEN
CPLEEU

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
26058421
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ARGON IONS; CADMIUM TELLURIDES; COMPUTERIZED SIMULATION; CONCENTRATION RATIO; DEPTH; ION IMPLANTATION; MERCURY; MERCURY TELLURIDES; MONTE CARLO METHOD; SPATIAL DISTRIBUTION; SPUTTERING
Descriptors DEC
CADMIUM COMPOUNDS; CALCULATION METHODS; CHALCOGENIDES; CHARGED PARTICLES; DIMENSIONS; DISTRIBUTION; ELEMENTS; IONS; MERCURY COMPOUNDS; METALS; SIMULATION; TELLURIDES; TELLURIUM COMPOUNDS