Published 1984 | Version v1
Miscellaneous Metadata-only

a-Si:H prepared by magnetically assisted dc-Sputtering

Creators

  • 1. Consejo Nacional de Investigaciones Cientificas e Tecnicas, Santa Fe (Argentina)

Description

We described a high pressure reactive dc-sputtering system for a-Si:H deposition. Optical and electrical transport measurement were performed in order to characterize the films. Results of dark and photoconductivity as a function of temperature and hydrogen content, and optical gap dependence on hydrogen content are present. (M.W.O.)

Abstract (Portuguese)

Descreve-se um sistema de deposicao do tipo dc-sputtering para o a-Si:H. Realizaram-se medidas de transporte eletrico e otico de modo a caracterizar os filmes. Estao tambem presentes resultados da dependencia da condutividade e da fotocondutividade com a temperatura e a concentracao de hidrogenio alem da dependencia do gap otico com a concentracao de hidrogenio. (M.W.O.)

Additional details

Additional titles

Original title (no language)
Anais do Simposio Latino-Americano de Fisica dos Sistemas Amorfos - v.2.

Publishing Information

Imprint Title
Proceedings of the Latin American Symposium of Physics of Amorphous Systems- v.2
Imprint Pagination
265 p.
Journal Page Range
p. 483-487.
Report number
INIS-BR--903

Conference

Title
Latin American Symposium of Physics of Amorphous Systems.
Dates
27 Feb - 2 Mar 1984.
Place
Niteroi, RJ (Brazil).

INIS

Country of Publication
Brazil
Country of Input or Organization
Brazil
INIS RN
18096364
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
AMORPHOUS STATE; PHOTOCONDUCTIVITY; SILICON ALLOYS; TEMPERATURE DEPENDENCE; THERMAL CONDUCTIVITY; THIN FILMS
Descriptors DEC
ALLOYS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; FILMS; PHYSICAL PROPERTIES; THERMODYNAMIC PROPERTIES

Optional Information

Notes
Imprint:Anais do Simposio Latino-Americano de Fisica dos Sistemas Amorfos - v.2.