Normally-off characteristics of LiNbO3/AlGaN/GaN ferroelectric field-effect transistor
Creators
- 1. Faculty of Science, China University of Petroleum, Qingdao 266555 (China)
- 2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)
- 3. National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016 (China)
Description
With the help of MgO mask layer, LiNbO3 (LN) ferroelectric films were etched effectively using wet etching method and LN/AlGaN/GaN ferroelectric field-effect transistors (FFETs) were fabricated. The electrical properties of the FFETs were studied. Due to the ferroelectric polarization nature of LN films, normally-off characteristics with a turn-on voltage of about + 1.0 V were exhibited in the device. The operation mechanisms of the LN/AlGaN/GaN FFET devices were proposed by the numerical calculations of the electronic band structure and charge distribution. - Highlights: ► LiNbO3/AlGaN/GaN ferroelectric field-effect transistors (FFETs) were fabricated. ► Normally-off characteristics were shown in the FFETs. ► The operation mechanisms of the FFETs were presented.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2012.06.040Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2012.06.040;
- PII
- S0040-6090(12)00750-X;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 520
- Journal Issue
- 19
- Journal Page Range
- p. 6313-6317
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44103515
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHARGE DISTRIBUTION; ELECTRICAL PROPERTIES; ETCHING; FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDES; LAYERS; LITHIUM COMPOUNDS; MAGNESIUM OXIDES; NIOBATES; NIOBIUM OXIDES; POLARIZATION; THIN FILMS
- Descriptors DEC
- ALKALI METAL COMPOUNDS; ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; DIELECTRIC MATERIALS; FILMS; GALLIUM COMPOUNDS; MAGNESIUM COMPOUNDS; MATERIALS; NIOBIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; REFRACTORY METAL COMPOUNDS; SEMICONDUCTOR DEVICES; SURFACE FINISHING; TRANSISTORS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.