Published December 4, 2013
| Version v1
Journal article
Effects of hydrogen irradiation on the optical and electronic properties of site-controlled InGaAsN V-groove quantum wires
Creators
- 1. Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 2, 00185 Roma, Italy and Laboratory of Physics of Nanostructures, EPFL, CH-1015 Lausanne (Switzerland)
- 2. High Field Magnet Laboratory, Institute for Molecules and Materials, Radboud University Nijmegen, Toernooiveld 7, 6525 ED Nijmegen, The Netherlands and School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)
- 3. Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 2, 00185 Roma (Italy)
- 4. Laboratory of Physics of Nanostructures, EPFL, CH-1015 Lausanne (Switzerland)
- 5. CNR - Istituto di Fotonica e Nanotecnologie, Via Cineto Romano 42, 00156 Roma (Italy)
- 6. Laboratory of Physics of Nanostructures, EPFL, CH-1015 Lausanne, Switzerland and Department of Physics, Technion-Israel Institute of Technology, Haifa 32000 (Israel)
- 7. High Field Magnet Laboratory, Institute for Molecules and Materials, Radboud University Nijmegen, Toernooiveld 7, 6525 ED Nijmegen (Netherlands)
Description
The properties of InGaAsN V-groove quantum wires (QWRs) –both untreated and irradiated with atomic hydrogen– are probed via micro-magneto-photoluminescence (PL) and polarization-dependent PL. As generally observed in dilute-nitride materials, H irradiation is found to fully passivate nitrogen, thus allowing us to accurately assess –and to precisely control– the effects of N incorporation in the QWRs
Additional details
Identifiers
- DOI
- 10.1063/1.4848257;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1566
- Journal Issue
- 1
- Journal Page Range
- p. 5-6
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 31. international conference on the physics of semiconductors
- Acronym
- ICPS 2012
- Dates
- 29 Jul - 3 Aug 2012
- Place
- Zurich (Switzerland)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45083160
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- HYDROGEN; IRRADIATION; PHOTOLUMINESCENCE; POLARIZATION; QUANTUM WIRES
- Descriptors DEC
- ELEMENTS; EMISSION; LUMINESCENCE; NANOSTRUCTURES; NONMETALS; PHOTON EMISSION
Optional Information
- Notes
- (c) 2013 AIP Publishing LLC