Published September 15, 1991
| Version v1
Journal article
The C 3Π--X 3Π band system of the SiC radical
Creators
- 1. Combustion Research Facility, Sandia National Laboratories, Livermore, California (USA)
Description
We report a study of the C 3Π--X 3Π band system of the SiC radical. Jet-cooled SiC is produced by a laser vaporization/pulsed beam source and is probed by pulsed laser-induced fluorescence excitation spectroscopy. Vibrational term energies and rotational constants are determined for v'=0--8 of the C state and for v double-prime=0--5 of the X state. The spectroscopic constants for the C state are Te=22 830.4(9) cm-1, ωe=615.7(8) cm-1, and re=1.919(3) A; for the X state, ωe=965.16(24) cm-1 and re=1.7182(2) A
Additional details
Publishing Information
- Journal Title
- Journal of Chemical Physics
- Journal Volume
- 95
- Journal Issue
- 6
- Series
- J. Chem. Phys.
- Journal Page Range
- 3939-3943
- ISSN
- 0021-9606
- CODEN
- JCPSA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22086623
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Descriptors DEI
- FLUORESCENCE; GROUND STATES; LASER SPECTROSCOPY; RADICALS; ROTATIONAL STATES; SILICON CARBIDES; VIBRATIONAL STATES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; EMISSION; ENERGY LEVELS; EXCITED STATES; LUMINESCENCE; PHOTON EMISSION; SILICON COMPOUNDS; SPECTROSCOPY