Published February 9, 1995 | Version v1
Journal article Metadata-only

Magnetic and electronic properties of Sn1-xGdxTe

Creators

  • 1. Institute of Physics, Polish Academy of Sciences Al. Lotnikow 32/46, 02-668, Warsaw (Poland)

Description

Magnetic susceptibility, electron paramagnetic resonance and transport properties of Sn1-xGdxTe semimagnetic semiconductor with 0.04≤x≤0.07 were investigated as a function of carrier concentration. For crystals with x<0.05, an abrupt increase of antiferromagnetic interspin interactions was found in samples with carrier concentration p=p*=(2.5-3.5)x1020 cm-3 as compared to samples with p>p*. ((orig.))

Additional details

Publishing Information

Journal Title
Journal of Magnetism and Magnetic Materials
Journal Volume
140-144
Journal Issue
1-3
Journal Page Range
p. 2041-2042.
ISSN
0304-8853
CODEN
JMMMDC

Conference

Title
International conference on magnetism (ICM).
Dates
22-26 Aug 1994.
Place
Warsaw (Poland).

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
26059309
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANTIFERROMAGNETISM; CARRIER DENSITY; CURIE POINT; ELECTRON SPIN RESONANCE; ELECTRONIC STRUCTURE; EXCHANGE INTERACTIONS; MAGNETIC FIELDS; MAGNETIC PROPERTIES; MAGNETIC SUSCEPTIBILITY; MANGANESE TELLURIDES; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TIN TELLURIDES
Descriptors DEC
CHALCOGENIDES; INTERACTIONS; MAGNETIC RESONANCE; MAGNETISM; MANGANESE COMPOUNDS; MATERIALS; PHYSICAL PROPERTIES; RESONANCE; TELLURIDES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE; THERMODYNAMIC PROPERTIES; TIN COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION TEMPERATURE