Effect of hydrogen plasma treatment on SnO2:F films for use in a-Si solar cells
Creators
- 1. Advanced Glass R and D Center, Asahi Glass Co., Ltd., 1150 Hazawa-cho, Kanagawa-ku, Yokohama 221 (Japan)
Description
This paper reports the effects of hydrogen plasma treatment on the properties of SnO2:F films investigated using x-ray photoelectron spectroscopy (XPS). It was found that silicon oxide formed at the interface between SnO2:F and a-Si:H was decreased by the pretreatment t temperatures above 150 degrees C for highly transparent films with low carrier concentration. The decrease of silicon oxide was closely correlated to the decrease in resistivity corresponding to the increase in Hall mobility of SnO2:F surface is a dominant effect of the pretreatment. The a-Si solar cell fabricated on the pretreated SnO2:F film showed improved fill-factor and conversion efficiency, which could be explained by the lowered sheet resistance and the improved SnO2:F/a-Si:H interface
Additional details
Publishing Information
- Publisher
- IEEE Service Center.
- Imprint Place
- Piscataway, NJ (USA)
- Imprint Title
- Twenty first IEEE photovoltaic specialists conference 1990 (Conference Record)
- Imprint Pagination
- 1673 p.
- Journal Page Range
- p. 1584-1587.
Conference
- Title
- 21. Institute for Electrical and Electronics Engineers (IEEE) photovoltaic specialists conference.
- Dates
- 21-25 May 1990.
- Place
- Kissimmee, FL (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22050278
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BEAM-PLASMA SYSTEMS; CARRIER DENSITY; CHEMICAL REACTION KINETICS; FABRICATION; FLUORINE ADDITIONS; HYDROGEN; INTERFACES; PHOTOVOLTAIC CONVERSION; SILICON OXIDES; SILICON SOLAR CELLS; THIN FILMS; TIN OXIDES; X-RAY SPECTRA
- Descriptors DEC
- CHALCOGENIDES; CONVERSION; DIRECT ENERGY CONVERSION; DIRECT ENERGY CONVERTERS; ELECTRONIC EQUIPMENT; ELEMENTS; ENERGY CONVERSION; EQUIPMENT; FILMS; KINETICS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; REACTION KINETICS; SILICON COMPOUNDS; SOLAR CELLS; SPECTRA; TIN COMPOUNDS
Optional Information
- Secondary number(s)
- CONF-900542--.