Published September 2015 | Version v1
Journal article

Long-term stability assessment of AlGaN/GaN field effect transistors modified with peptides: Device characteristics vs. surface properties

  • 1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695 (United States)

Description

AlGaN/GaN Field Effect Transistors (FETs) are promising biosensing devices. Functionalization of these devices is explored in this study using an in situ approach with phosphoric acid etchant and a phosphonic acid derivative. Devices are terminated on peptides and soaked in water for up to 168 hrs to examine FETs for both device responses and surface chemistry changes. Measurements demonstrated threshold voltage shifting after the functionalization and soaking processes, but demonstrated stable FET behavior throughout. X-ray photoelectron spectroscopy and atomic force microscopy confirmed peptides attachment to device surfaces before and after water soaking. Results of this work point to the stability of peptide coated functionalized AlGaN/GaN devices in solution and support further research of these devices as disposable, long term, in situ biosensors

Additional details

Identifiers

Publishing Information

Journal Title
AIP Advances
Journal Volume
5
Journal Issue
9
Journal Page Range
p. 097102-097102.6
ISSN
2158-3226
CODEN
AAIDBI

Optional Information

Notes
(c) 2015 Author(s)