Published 1997
| Version v1
Book
Fabrication of SiC/SiCf composites by hot-pressing and their mechanical properties at room and elevated temperature
Creators
- 1. Tokyo Inst. of Tech. (Japan). Research Lab. for Nuclear Reactors
Description
Continuous 2D woven SiC fiber-reinforced SiC composites were fabricated by conventional hot-pressing in Ar at 1650-1750degC under an applied pressure of 40 MPa. To obtain dense composite as lower temperature as possible to avoid degradation of SiC fiber, Al-B-C system sintering additives for matrix SiC were selected. Fabrication process of the composites, micro-structure, effect of fiber coating on fracture properties at room and elevated temperature are presented. Using BN-coated Hi-Nicalon cloths as a reinforcement, the composite with nearly full density was successfully obtained by hot-pressing, and it showed pseudo ductile fracture behavior. (author)
Additional details
Publishing Information
- Publisher
- The Japanese Society of Materials for Advanced Energy Systems
- Imprint Place
- Kyoto (Japan)
- Imprint Title
- SiC/SiC ceramic composites for fusion applications
- Imprint Pagination
- 132 p.
- Journal Page Range
- p. 101-105
Conference
- Title
- 2. IEA/JUPITER joint international workshop on SiC/SiC ceramic composites for fusion applications
- Dates
- 23-24 Oct 1997
- Place
- Sendai (Japan)
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 30018349
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMBIENT TEMPERATURE; COMPOSITE MATERIALS; DENSITY; FIBERS; FRACTURE PROPERTIES; HOT PRESSING; MICROSTRUCTURE; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDES; SINTERED MATERIALS; SINTERING; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 1000-4000 K; THERMONUCLEAR REACTOR MATERIALS
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; FABRICATION; MATERIALS; MATERIALS WORKING; MECHANICAL PROPERTIES; MICROSCOPY; PHYSICAL PROPERTIES; PRESSING; SILICON COMPOUNDS; TEMPERATURE RANGE