Recombination kinetics of excess electrons at low temperatures

A new theory based on the Eyring type kinetic equation is proposed for describing excess electron recombination at low temperatures. It takes into account two important physical processes governing the recombination kinetics, namely the discrete consecutive stochastic transitions of the excess electron from one localized state to another and its direct quantum-mechanical tunnelling from any localized state to the corresponding unoccupied level of a positive ion. Results obtained in the framework of this theory are compared with experimental data on luminescence of organic glasses at low temperatures. (author)