Published April 1, 2011
| Version v1
Journal article
Hydrogenic impurities in quantum dots under intense high-frequency laser field
- 1. Physics Department, Cumhuriyet University, 58140 Sivas (Turkey)
- 2. Physics Department, Dokuz Eylul University, Izmir (Turkey)
Description
The effects of intense high-frequency laser field on photoionization cross-section and binding energy of shallow-donor impurities in GaAs/GaAlAs quantum dots are calculated using variational method with the effective-mass approximation. From these calculations, it has been concluded that the dependences of the impurity binding energy and photoionization cross-section on the intense laser field are very significant.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2011.01.045Additional details
Identifiers
- DOI
- 10.1016/j.physb.2011.01.045;
- PII
- S0921-4526(11)00082-2;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 406
- Journal Issue
- 8
- Journal Page Range
- p. 1441-1444
- ISSN
- 0921-4526
- CODEN
- PHYBE3
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42075769
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM COMPOUNDS; APPROXIMATIONS; ARSENIC COMPOUNDS; BINDING ENERGY; CROSS SECTIONS; EFFECTIVE MASS; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; IMPURITIES; LASER RADIATION; PHOTOIONIZATION; QUANTUM DOTS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CALCULATION METHODS; ELECTROMAGNETIC RADIATION; ENERGY; GALLIUM COMPOUNDS; IONIZATION; MASS; NANOSTRUCTURES; PNICTIDES; RADIATIONS
Optional Information
- Copyright
- Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.