Published June 1985
| Version v1
Journal article
Luminescence study of a 3000C electron irradiated InP epilayer
- 1. Toulouse-3 Univ., 31 (France). Lab. de Physique des Solides
- 2. Toulouse-3 Univ., 31 (France). Lab. d'Optique Electronique
Description
In epitaxial InP new emission bands at 1.409, 1.403, 1.398 and 1.396 eV are evidenced. Their behaviour after annealing and after subsequent electron irradiation at the same temperature of 3000C is studied. A fifth emission band at 1.392 eV appears after irradiation. Two of these lines could be related to excitons bound to deep levels. The other three lines are tentatively related to shallow acceptor levels. (author)
Additional details
Publishing Information
- Journal Title
- Solid State Commun.
- Journal Volume
- 54
- Journal Issue
- 9
- Series
- Solid State Commun.
- Journal Page Range
- 767-770
- ISSN
- 0038-1098
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 16063533
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; ELECTRON BEAMS; EMISSION SPECTRA; EPITAXY; EXCITONS; HIGH TEMPERATURE; INDIUM PHOSPHIDES; LAYERS; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS
- Descriptors DEC
- BEAMS; EMISSION; HEAT TREATMENTS; INDIUM COMPOUNDS; LEPTON BEAMS; LUMINESCENCE; PARTICLE BEAMS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; QUASI PARTICLES; RADIATION EFFECTS; SPECTRA