Control of the effective height of Schottky barviers on silicon by implanting low-energy gallium ions

Implanted donors and lattice defects, accompanying implantation, alter the Schottky barrier height in a similar manner, which introduces uncertainty in revealing the physics of the process. In order to increase the effective height of Schottky barriers in Al-n-Si, we implanted acceptor ions (Ga with E=6-7 keV). The thermal treatment was performed in the process or after the irradiation. The annealing temperature 650 deg and the irradiation temperature 550 deg without the additional thermal treatment were sufficient to increase the barriers height, which indicated the impurity nature of the effect. The parameters of the barriers were studied as a function of the implantation conditions. Variation of the heights within 0.66-0.85 eV was attained with ideality factors β=1.09-1.2 and rectification factors 105-106. Worsening of the structure parameters at irradiation temperatures above 750 deg was attributed to the radiation-enhanced diffusion of gallium