Published December 1, 2010 | Version v1
Journal article

Room temperature growth and properties of ZnO films by pulsed laser deposition

  • 1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, 38 Zhe Da Rd., Hangzhou, Zhejiang 310027 (China)

Description

ZnO thin films were prepared by pulsed laser deposition at room temperature on glass substrates with oxygen pressures of 10-30 Pa. The structural, electrical, and optical properties of ZnO films were studied in detail. ZnO films had an acceptable crystal quality with high c-axis orientation and smooth surface. The resistivity was in the 102 Ω cm order for ZnO films, with the electron concentration of 1016-1017 cm-3. All the films showed a high visible transmittance ∼90% and a high UV absorption about 90-100%. The UV emission ∼390 nm was observed in the photoluminescence spectra. The oxygen pressures in the 10-30 Pa range were suitable for room temperature growth of high-quality ZnO films.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2010.08.057

Additional details

Identifiers

DOI
10.1016/j.apsusc.2010.08.057;
PII
S0169-4332(10)01135-9;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
257
Journal Issue
4
Journal Page Range
p. 1310-1313
ISSN
0169-4332
CODEN
ASUSEE

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.