Published December 15, 1970
| Version v1
Journal article
Evolution of the distribution of interface states in MOS structures irradiated with electrons and subjected to the effect of an under field thermal treatment
Creators
- 1. CEA Centre d'Etudes Nucleaires de Grenoble, 38 (France). Service de Physique du Solide et de Resonance Magnetique
Description
no abstract available
Additional details
Additional titles
- Original title (French)
- Evolution de la distribution des etats d'interface dans des structures MOS irradiees aux electrons et soumises a l'effet d'un traitement thermique sous champ
Identifiers
Publishing Information
- Journal Title
- Solid State Communications
- Journal Volume
- 8
- Journal Issue
- 24
- Series
- Solid State Commun.
- Journal Page Range
- 2135-2139
- ISSN
- 0038-1098
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 2010347
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Progress Report
- Descriptors DEI
- ALUMINUM; ANNEALING; CAPACITORS; ELECTRONS; INTERFACES; RADIATION EFFECTS; SILICON OXIDES
- Descriptors DEC
- SURFACES
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent