Published 1989 | Version v1
Journal article Metadata-only

A mechanism of amorphization-crystallization processes in irradiated semiconductors

Creators

  • 1. Moskovskij Inst. Ehlektronnoj Tekhniki, Moscow (USSR)

Description

A possible atomic mechanism for amorphization-crystallization processes in ion-irradiated diamond-type semiconductors is proposed in the present work. This mechanism is based on the concept of a phase transition into a new state with the participation of point defects and can be considered as a basis for the kinetic description of amorphization-crystallization processes in semiconductors during irradiation. (author)

Additional details

Publishing Information

Journal Title
Radiation Effects and Defects in Solids
Journal Volume
111-112
Journal Issue
1-2
Series
Radiat. Eff. Defects Solids.
Journal Page Range
461-466
CODEN
REDSE

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
21035358
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
AMORPHOUS STATE; CRYSTAL LATTICES; CRYSTAL MODELS; CRYSTAL-PHASE TRANSFORMATIONS; CRYSTALLIZATION; ION IMPLANTATION; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS
Descriptors DEC
CRYSTAL STRUCTURE; MATERIALS; MATHEMATICAL MODELS; PHASE TRANSFORMATIONS; RADIATION EFFECTS