Published April 1973
| Version v1
Journal article
Exciton radiative recombination in semiconductors at high excitation levels
- 1. AN Moldavskoj SSR, Kishinev. Inst. Prikladnoj Fiziki
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Излучательная рекомбинация экситонов в полупроводниках при больших уровнях возбуждения
Publishing Information
- Journal Title
- Izv. Akad. Nauk SSSR, Ser. Fiz.
- Journal Volume
- 37
- Journal Issue
- 4
- Series
- Izv. Akad. Nauk SSSR, Ser. Fiz.
- Journal Page Range
- 891-895
Conference
- Title
- International conference on luminescence.
- Dates
- 17 Aug 1972.
- Place
- Leningrad, USSR.
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 4072359
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABSORPTION; ANNIHILATION; CADMIUM SULFIDES; COLLISIONS; CRYSTALS; DIAGRAMS; DISSOCIATION; EXCITONS; GERMANIUM; KINETIC ENERGY; LUMINESCENCE; RECOMBINATION; SEMICONDUCTOR MATERIALS; SILICON; SPECTRA; WAVE FUNCTIONS
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; ELECTROMAGNETIC INTERACTIONS; ELEMENTS; ENERGY; FUNCTIONS; INORGANIC PHOSPHORS; INTERACTIONS; PHOSPHORS; QUASI PARTICLES; SEMIMETALS; SULFIDES
Optional Information
- Notes
- For English translation see the journal Bull. Acad. Sci. USSR, Phys. Sci.