Published December 1991
| Version v1
Journal article
Microwave properties of halide-CVD grown BiSrCaCuO thin films
Description
We have studied the surface resistance (Rs) at 9.6GHz of CVD grown BiSrCaCuO thin films. Rs values as low as 0.2mΩ at 60K could be attained in films whose grain sizes are as large as 30μm. The films which consist of small grains (<0.5μm) showed a dependence of Rs on the rotational misalignments of grains. In highly oriented films, Rs is about 0.6mΩ at 4K which is less than one third of that of rotationaly misaligned film. (orig.)
Additional details
Publishing Information
- Journal Title
- Physica. C, Superconductivity
- Journal Volume
- 185-189
- Journal Issue
- pt.3
- Series
- Phys., C Supercond.
- Journal Page Range
- 2021-2022
- ISSN
- 0921-4534
- CODEN
- PHYCE
Conference
- Title
- The science of HTSC.
- Acronym
- 3. international conference on materials and mechanisms of superconductivity high temperature superconductors (M2S-HTSC-3)
- Dates
- 22-26 Jul 1991.
- Place
- Kanazawa (Japan).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 23042336
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BISMUTH OXIDES; CALCIUM OXIDES; CHEMICAL VAPOR DEPOSITION; COPPER OXIDES; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; GRAIN ORIENTATION; GRAIN SIZE; HIGH-TC SUPERCONDUCTORS; MICROWAVE RADIATION; ROTATIONAL STATES; STRONTIUM OXIDES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; THIN FILMS
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; BISMUTH COMPOUNDS; CALCIUM COMPOUNDS; CHALCOGENIDES; CHEMICAL COATING; COPPER COMPOUNDS; CRYSTAL STRUCTURE; DEPOSITION; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ENERGY LEVELS; EXCITED STATES; FILMS; MICROSTRUCTURE; ORIENTATION; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; SIZE; STRONTIUM COMPOUNDS; SUPERCONDUCTORS; SURFACE COATING; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS