Published November 1, 2017 | Version v1
Journal article

Biomimetic nanostructures in ZnS and ZnSe provide broadband anti-reflectivity

  • 1. Department of Chemical Engineering, University of California-Santa Barbara, Santa Barbara, CA 93106-5080, United States of America (United States)
  • 2. US Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783, United States of America (United States)
  • 3. Institute for Collaborative Biotechnologies, University of California-Santa Barbara, Santa Barbara, CA 93106-5100, United States of America (United States)

Description

Graded-index, moth eye-inspired anti-reflective features were fabricated in ZnS and ZnSe via nanosphere lithography using a Langmuir–Blodgett dip-coating method with plasma-based mask reduction and pattern transfer. Arrays of hexagonally close-packed conical frusta (top diameter = 300 nm, pitch = 690 nm, height = 2800 nm) were realized by isotropic etching (size-reduction) of the colloidal mask with CF4/Ar, followed by pattern transfer into the substrate using CH4/H2 plasma etching. Substantial increases in broadband transmission were achieved across the 2–20 μ m range, yielding 23% and 26% single-side transmission improvement, and 92% and 88% absolute double-side transmission for ZnS and ZnSe, respectively, in excellent agreement with finite difference time domain (FDTD) optical simulations. Experimental differences in direct versus total transmission, and the general fall off of transmission at short wavelengths, were attributed to diffuse forward scattering and diffractive effects, as predicted by far-field scattering patterns using FDTD. The fabrication method presented can be used to enhance efficiency for multiple IR applications by minimizing reflective losses, while offering the further advantages of scalability and low cost. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/2040-8986/aa8fbb

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Optics (Online)
Journal Volume
19
Journal Issue
11
Journal Page Range
[6 p.]
ISSN
2040-8986