Published 1974 | Version v1
Journal article

Radiation domage in 2-6 semiconductor

  • 1. Brown Univ., Providence, R.I. (USA). Div. of Engineering

Description

The paper reviews investigations of the effects of high energy irradiation on the properties of the 2-6 semiconductors CdS, CdSe, CdTe, ZnS, ZnSe and ZnTe. Most of the work has involved electron irradiation experiments aimed at establishing the displacement thresholds for each of the two constituent atoms by observing changes in the luminescence spectra. In all cases, except ZnTe, the energy required to displace the column 2 atom is higher than the energy required to displace the column 6 atom. The observed changes in luminescence consist of the introduction of new luminescence bands, usually in the impurity emission spectral region. (author)

Additional details

Additional titles

Original title (Polish)
Uszkodzenia radiacyjne w polprzewodnikach 2-6

Publishing Information

Journal Title
Postepy Fiz.
Journal Volume
25
Journal Issue
1
Series
Postepy Fiz.
Journal Page Range
77-99

Conference

Title
4. National seminar on semiconducting compounds A"2 - B"6.
Dates
2 Apr 1973.
Place
Jaszowiec, Poland.

Optional Information

Notes
45 ref.