Published January 1, 2005
| Version v1
Journal article
GaN quantum dots: from basic understanding to unique applications
- 1. Materials Science and Technology Department, University of Crete, PO Box 2208, 71003 Heraklion (Greece)
- 2. Microelectronics Research Group, FORTH/IESL, PO Box 1527, 71110 Heraklion (Greece)
- 3. Laboratoire Spectrometrie Physique (CNRS UMR5588), Universite J. Fourier-Grenoble I, BP 87, 38402 Saint Martin d'Heres Cedex (France)
- 4. CEA-CNRS joint group Nanophysique et Semiconducteurs, Departement de Recherche Fondamentale sur la Matiere Condensee, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)
Description
The GaN self-assembled quantum dots constitute a very special and intriguing type of semiconductor nanostructure, mainly because they carry in their structure a giant internal electric field that can reach a value up to 7 MV/cm. In this report, we review the most important structural and optical properties of GaN quantum dots, and we discuss their advantages and limitations for blue-UV optoelectronic applications. (invited paper)
Availability note (English)
Available online at http://stacks.iop.org/1742-6596/10/61/jpconf5_10_016.pdf or at the Web site for the Journal of Physics. Conference Series (Online) (ISSN 1742-6596) http://www.iop.org/Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 10
- Journal Issue
- 1
- Journal Page Range
- p. 61-68
- ISSN
- 1742-6596
Conference
- Title
- 2. conference on microelectronics, microsystems and nanotechnology
- Dates
- 14-17 Nov 2004
- Place
- Athens (Greece)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36107919
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRIC FIELDS; GALLIUM NITRIDES; OPTICAL PROPERTIES; QUANTUM DOTS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- GALLIUM COMPOUNDS; MATERIALS; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES