Properties of nitrogen-implanted p-type ZnO films grown on Si3N4/Si by radio-frequency magnetron sputtering
- 1. Research Division, National Synchrotron Radiation Research Center, Hsinchu, Taiwan 300 (China)
- 2. Materials Research Laboratories, Industrial Technology Research Institution, Chutung. Taiwan (China)
- 3. Department of Materials Science and Engineering, National Chiao-Tung University, 1001 Ta-hsueh Road, Hsinchu, Taiwan (China)
Description
An nitrogen-implanted p-type ZnO film has been grown on a Si substrate buffered with Si3N4 using radio-frequency magnetron sputtering. The Si3N4 buffer layer can effectively improve film stoichiometry and reduce the formation of oxygen vacancies compared to ZnO on Si. The electrical properties of the p-type ZnO films implanted with 5x1012-1x1014 cm-2 N+ dose show a hole concentration of 5.0x1016-7.3x1017 cm-3, hole mobility of 2.51-6.02 cm2/V s, and resistivity of 10.11-15.3 Ω cm. The p-type ZnO films also showed an excellent crystallinity and a strong ultraviolet emission peak near 3.30 eV at room temperature. Moreover, as evidenced by extended x-ray absorption fine structure analysis, the local structure of the p-type ZnO films was changed due to the substitution of nitrogen ions for oxygen ions in p-type ZnO films. Our finding of p-type ZnO films grown on a Si3N4/Si substrate could provide a simple method to fabricate reproducible p-type ZnO films on silicon substrate for the development of large-scale optoelectronic integration device
Additional details
Identifiers
- DOI
- 10.1063/1.1763640;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 84
- Journal Issue
- 24
- Journal Page Range
- p. 5040-5042
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36047759
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION SPECTROSCOPY; ELECTRIC CONDUCTIVITY; EV RANGE 01-10; FINE STRUCTURE; HOLE MOBILITY; ION IMPLANTATION; NITROGEN IONS; OXYGEN IONS; PHOTOLUMINESCENCE; RADIOWAVE RADIATION; SILICON; SILICON NITRIDES; SPUTTERING; STOICHIOMETRY; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; ULTRAVIOLET SPECTRA; VACANCIES; X-RAY SPECTROSCOPY; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; EMISSION; ENERGY RANGE; EV RANGE; FILMS; IONS; LUMINESCENCE; MOBILITY; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; POINT DEFECTS; RADIATIONS; SEMIMETALS; SILICON COMPOUNDS; SPECTRA; SPECTROSCOPY; TEMPERATURE RANGE; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2004 American Institute of Physics.