Deep-level transient spectroscopy measurements of majority carrier traps in neutron-irradiated n-type silicon detectors

The effect of damage produced in silicon detectors by neutron irradiation at room temperature is examined by using the experimental technique of deep-level transient spectroscopy. The production of three defects, the A centre, the E centre, and the divacancy, is reported. The divacancy is especially important in neutron damage in silicon. There is evidence of some defects generated during annealing. It has been found that the properties of the point defects outside the clusters are the main results obtained with DLTS methods. (orig.)