Published March 2008 | Version v1
Journal article Metadata-only

High dose Fe implantation of GaN: damage build-up and dopant redistribution

Creators

  • 1. Department of Physical Electronics, St. Petersburg State Polytechnical University, St. Petersburg, 195251 (Russian Federation)
  • 2. Royal Institute of Technology, ICT-MAP, Electrum 229 SE-164 40, Kista-Stockholm (Sweden)
  • 3. Division of Ion Physics, Angstroem Laboratory, Uppsala University, SE-751 21 Uppsala (Sweden)

Description

Undoped GaN epilayers implanted at room temperature with 50-325 keV Fe+ ions in the fluence range of 1015 - 1017 ions/cm2 are studied by a combination of Rutherford backscattering/channeling spectrometry and time-of-flight elastic recoil detection analysis. Results show that for high ion fluences (>1x1016 cm-2) enhanced Fe concentration closer to the surface is observed. The Fe redistribution towards the surface increases as the ion fluence increases. Our findings are attributed to radiation enhanced diffusion during ion implantation and increasing of Fe diffusivity in the implantation-induced amorphous phase near the surface

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/100/4/042036

Additional details

Identifiers

DOI
10.1088/1742-6596/100/4/042036;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
100
Journal Issue
4
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
17. international vacuum congress; ICSS-13: 13. international conference on surface science; ICN+T 2007: International conference on nanoscience and technology
Acronym
IVC-17
Dates
2-6 Jul 2007
Place
Stockholm (Sweden)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40016025
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
AMORPHOUS STATE; CHANNELING; DETECTION; DIFFUSION; GALLIUM NITRIDES; ION BEAMS; ION IMPLANTATION; IRON IONS; IRRADIATION; KEV RANGE; PHYSICAL RADIATION EFFECTS; RECOILS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SURFACES; TIME-OF-FLIGHT METHOD
Descriptors DEC
BEAMS; CHARGED PARTICLES; ENERGY RANGE; GALLIUM COMPOUNDS; IONS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; RADIATION EFFECTS; SPECTROSCOPY