Published September 1976 | Version v1
Journal article Metadata-only

Recombination properties of indium antimonide doped with chromium

Creators

  • 1. AN SSSR, Leningrad. Fiziko-Tekhnicheskij Inst.
  • 2. Gosudarstvennyj Nauchno-Issledovatel'skij i Proektnyj Inst. Redkometallicheskoj Promyshlennosti, Moscow (USSR)

Description

Temperature dependences have been investigated of electron and hole lifetimes in indium antimonide single crystals doped with chromium. It is shown that the structure defect and acceptor levels, their concentrations significantly increasing with chromium content in the melt, take part in the recombination of nonequilibrium current carriers in n-InSb/Cr in the temperature range 77/180 K. No supplementary recombination levels have been observeddafter chromium doping into indium antimonide. The effect of low-temperature annealing on recombination properties of doped indium antimonide is elucidated

Additional details

Additional titles

Original title (Russian)
Рекомбинационные свойства антимонида индия, легированного хромом

Publishing Information

Journal Title
Fiz. Tekh. Poluprovodn.
Journal Volume
10
Journal Issue
9
Series
Fiz. Tekh. Poluprovodn.
Journal Page Range
1723-1725

INIS

Country of Publication
USSR
Country of Input or Organization
USSR
INIS RN
8338801
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; ANTIMONY COMPOUNDS; CARRIER LIFETIME; CHROMIUM ADDITIONS; COMPARATIVE EVALUATIONS; CRYSTAL DEFECTS; DOPED MATERIALS; ELECTRONS; HOLES; INDIUM COMPOUNDS; LOW TEMPERATURE; MONOCRYSTALS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; QUANTITY RATIO; RECOMBINATION; TEMPERATURE DEPENDENCE
Descriptors DEC
CRYSTAL STRUCTURE; CRYSTALS; ELEMENTARY PARTICLES; FERMIONS; HEAT TREATMENTS; LEPTONS; LIFETIME; SEMICONDUCTOR MATERIALS

Optional Information

Notes
For English translation see the journal Sov. Phys. - Semicond.