Published November 2006 | Version v1
Journal article Metadata-only

High temperature annealing-induced phase transformation characteristic of nitrogen-rich hafnium nitride films

Creators

  • 1. Tokyo Univ., School of Engineering, Tokyo (Japan)
  • 2. Advanced Industrial Science and Technology, Tsukuba, Ibaraki (JP)

Description

Phase transformation characteristic of nitrogen (N)-rich hafnium nitride HfNx (x>1) by post rapid thermal annealing (PRTA) process was investigated. Insulating N-rich HfN1.44 film was grown by DC sputtering and 1000degC, 1 min PRTA process was carried out on this sample. The resistivity of the HfN1.44 film can be reduced from insulating characteristic to metallic level of 3.6 x 103 μΩ·cm, possibility due to decomposition of N-rich HfNx (x>1) into HfN. This evolution can be attributed to the thermal instability of N-rich HfNx (x>1) at high temperature. This result indicates a potential application of PRTA process in synthesizing pure HfN metal gate electrode for hafnium-based high-κ metal-oxide-semiconductor (MOS) stacks. (author)

Additional details

Publishing Information

Journal Title
Japanese Journal of Applied Physics. Part 2, Letters and Express Letters
Journal Volume
45
Journal Issue
42-45
Journal Page Range
p. L1183-L1185
ISSN
0021-4922

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
38031861
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; ELECTRIC CONDUCTIVITY; FILMS; HAFNIUM NITRIDES; MOS TRANSISTORS; NITROGEN; PHASE TRANSFORMATIONS; STABILITY; TEMPERATURE RANGE 1000-4000 K; THICKNESS; X-RAY DIFFRACTION
Descriptors DEC
COHERENT SCATTERING; DIFFRACTION; DIMENSIONS; ELECTRICAL PROPERTIES; ELEMENTS; HAFNIUM COMPOUNDS; HEAT TREATMENTS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PHYSICAL PROPERTIES; PNICTIDES; REFRACTORY METAL COMPOUNDS; SCATTERING; SEMICONDUCTOR DEVICES; TEMPERATURE RANGE; TRANSISTORS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
16 refs., 4 figs.