Published June 17, 1999 | Version v1
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The Effect of Near-Interface Network Strain on the Mobility of Protons in SiO2

Creators

Description

Our data suggest a correlation between near-interface strain in SiO2 and the ratio of fixed vs. mobile positive charge generated at the interface during forming gas annealing. A model based on first-principles quantum mechanical calculations supports this correlation

Availability note (English)

Available from INIS in electronic form; Also available from OSTI as DE00007899; PURL: https://www.osti.gov/servlets/purl/7899-rqh6MG/webviewable/

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Additional details

Identifiers

URL
https://www.osti.gov/servlets/purl/7899-rqh6MG/webviewable/;

Publishing Information

Imprint Pagination
7 p.
Report number
SAND--99-1531C

Conference

Title
36. IEEE Annual International Nuclear and Space Radiation Effects Conference (NSREC)
Dates
12-16 Jul 1999
Place
Norfolk, VA (United States)

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
32028928
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; INTERFACES; MATHEMATICAL MODELS; PROTONS; QUANTUM MECHANICS; RADIATION EFFECTS; SILICA; STRAINS
Descriptors DEC
BARYONS; CATIONS; CHALCOGENIDES; CHARGED PARTICLES; ELEMENTARY PARTICLES; FERMIONS; HADRONS; HEAT TREATMENTS; HYDROGEN IONS; HYDROGEN IONS 1 PLUS; IONS; MECHANICS; MINERALS; NUCLEONS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; SILICON OXIDES

Optional Information

Contract/Grant/Project number
AC04-94AL85000
Funding organization
US Department of Energy (United States)